K. Shiozawa

Isolation edge effect depending on gate length of MOSFETs with various isolation structures

Toshiyuki Oishi, K. Shiozawa, Akihiko Furukawa et al. · IEEE Transactions on Electron Devices · 2000 · 30 citations

Device Modeling, Electrical Engineering, Various Isolation Structures +10

Simulation study on comparison between metal gate and polysilicon gate for sub-quarter-micron MOSFETs

Yusuke Abe, Toshiyuki Oishi, K. Shiozawa et al. · IEEE Electron Device Letters · 1999 · 29 citations

Device Modeling, Metal Gate Nmosfet, Electrical Engineering +13

Successful Enhancement of Lifetime for SiO<tex>$_2$</tex>on 4H-SiC by N<tex>$_2$</tex>O Anneal

Keiko Fujihira, Natsuko Miura, K. Shiozawa et al. · IEEE Electron Device Letters · 2004 · 22 citations

Materials Engineering, Materials Science, Electrical Engineering +12

Highly Selective Contact Hole Etching Using Electron Cyclotron Resonance Plasma

Hajime Kimura, K. Shiozawa, Kenji Kawai et al. · Japanese Journal of Applied Physics · 1995 · 15 citations

Selective Etching, Engineering, Electron-beam Lithography +16

Giga-bit scale DRAM cell with new simple Ru/(Ba,Sr)TiO/sub 3//Ru stacked capacitors using X-ray lithography

Yasutaka NISHIOKA, K. Shiozawa, Toshiyuki Oishi et al. · 2002 · 12 citations

Engineering, Electron-beam Lithography, Emerging Memory Technology +17