E. André

Self-organized growth of regular nanometer-scale InAs dots on GaAs

J. M. Moison, F. Houzay, F. Barthe et al. · Applied Physics Letters · 1994 · 927 citations

Materials Science, Semiconductors, Strained Structures +14

Silicon roughness induced by plasma etching

R. Petri, Pascal Brault, O. Vatel et al. · Journal of Applied Physics · 1994 · 106 citations

Engineering, Plasma Physics, Single-crystal Silicon Roughness +18

Boron diffusion through thin gate oxides: Influence of nitridation and effect on the Si/SiO2 interface electrical characteristics

D. Mathiot, A. Straboni, E. André et al. · Journal of Applied Physics · 1993 · 66 citations

Materials Science, Thin Gate Oxides, Electrical Engineering +14

Atomic Force Microscopy and Infrared Spectroscopy Studies of Hydrogen Baked Si Surfaces

O. Vatel, Steven Verhaverbeke, H. Bender et al. · Japanese Journal of Applied Physics · 1993 · 23 citations

Atomic Force Microscopy, Engineering, Microscopy +16

On the Hydrogen Content of Commercial Silicon Wafers

A. Chantre, L. Bouchet, E. André · Journal of The Electrochemical Society · 1988 · 17 citations

Engineering, Chemistry, Semiconductor Device +17