Self-organized growth of regular nanometer-scale InAs dots on GaAs

J. M. Moison, F. Houzay, F. Barthe, +3

Applied Physics Letters

Materials ScienceSemiconductorsStrained StructuresEpitaxial GrowthEngineering +12

Silicon roughness induced by plasma etching

R. Petri, Pascal Brault, O. Vatel, +4

Journal of Applied Physics

EngineeringPlasma PhysicsSingle-crystal Silicon RoughnessSilicon On InsulatorPlasma Processing +16

Boron diffusion through thin gate oxides: Influence of nitridation and effect on the Si/SiO2 interface electrical characteristics

D. Mathiot, A. Straboni, E. André, +1

Journal of Applied Physics

Materials ScienceThin Gate OxidesElectrical EngineeringBoron DiffusionEngineering +12

Atomic Force Microscopy and Infrared Spectroscopy Studies of Hydrogen Baked Si Surfaces

O. Vatel, Steven Verhaverbeke, H. Bender, +6

Japanese Journal of Applied Physics

Atomic Force MicroscopyEngineeringMicroscopySilicon On InsulatorSurface Terraces +14

On the Hydrogen Content of Commercial Silicon Wafers

A. Chantre, L. Bouchet, E. André

Journal of The Electrochemical Society

EngineeringChemistrySemiconductor DeviceSemiconductorsHydrogen Neutralization +15

Surface roughness of ion implanted 〈100〉 silicon studied by atomic force microscopy

Daniel Courboin, A. Grouillet, E. André

Surface Science

Materials ScienceAtomic Force MicroscopyIon ImplantationEngineeringSurface Roughness +5

Boron doping of Si molecular-beam epitaxy layers: A new high-temperature effusion cell

Stéphane Andrieu, J. A. Chroboczek, Y. Campidelli, +2

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

Materials ScienceSemiconductorsElectrical EngineeringEpitaxial GrowthEngineering +12

A 0.12μm CMOS DVB-T tuner

D. Saias, Franck Montaudon, E. André, +11

Cmos Dvb-t TunerEngineeringAnalog-to-digital ConverterDigital Demodulator IpData Converter +10

Re-examination of indium implantation for a low power 0.1 μm technology

Pierre Bouillon, F. Bénistant, T. Skotnicki, +9

EngineeringμM TechnologyWireless Implantable DeviceLow Power 0.1Semiconductor Device +15

Secondary ion mass spectrometry generates swelling of GaSb: Depth resolution and secondary ion yields

M. Gauneau, R. Chaplain, A. Rupert, +3

Journal of Applied Physics

Cesium BombardmentEngineeringSecondary Ion YieldsBiological Mass SpectrometryIon Beam Instrumentation +20