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On the Hydrogen Content of Commercial Silicon Wafers
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1988
Year
EngineeringChemistrySemiconductor DeviceSemiconductorsHydrogen NeutralizationCommercial Silicon WafersMaterials ScienceSemiconductor TechnologyElectrical EngineeringHydrogen TransportAtomic HydrogenHydrogen UtilizationSemiconductor MaterialSemiconductor Device FabricationHydrogenMicroelectronicsResistance MeasurementsHydrogen TransitionSurface ScienceApplied Physics
We have characterized a series of commercially available p‐type silicon wafers using Schottky barrier capacitance voltage and spreading resistance measurements. A high resistivity near surface (∼1 μm) region is systematically observed, which can be annealed out by heating the material above ∼200°C. Hydrogen neutralization of boron acceptors has been identified as the cause of this phenomenon. Atomic hydrogen is believed to be incorporated in the material during polishing.