Y.G. Shin is an author at Samsung (South Korea) specializing in electrical engineering, microelectronics, and resistive random-access memory.
Top concepts
Physics3D MemoryMagnetismEngineeringSpintronicsMemory DevicesApplied PhysicsMicroelectronicsSpin-orbit TorqueMemory Reliability
Publications per year
1994–2023
4
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Low power operating bipolar TMO ReRAM for sub 10 nm era
Min Jung Kim, In-Hwan Baek, Y.H. Ha et al. · 2010 · 76 citations
On-axis scheme and novel MTJ structure for sub-30nm Gb density STT-MRAM
Sechang Oh, J. H. Jeong, W. C. Lim et al. · 2010 · 22 citations
Highly Reliable and Manufacturable MRAM embedded in 14nm FinFET node
Seung Hwan Ko, J.H. Park, J. Bąk et al. · 2023 · 13 citations
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