Concepedia

Publication | Closed Access

Highly Reliable and Manufacturable MRAM embedded in 14nm FinFET node

DOI

13

Citations

0

References

2023

Year

Seung Hwan Ko, J.H. Park, J. Bąk, Hoeryong Jung, Jaehoon Shim, D. S. Kim, Woo‐Hyun Lim, D.-E. Jeong, J. H. Lee, Kyoobin Lee,

Unknown Venue

Abstract

We demonstrated highly reliable and manufacturable 16Mb magnetic random access memory (eMRAM) embedded in 14nm FinFET logic by achieving high yield over 90% at an operating temperature ranging from $-40^{\circ}\mathrm{C}$ to $125^{\circ}\mathrm{C}$ and passing the PKG reliability tests, such as HTOL and endurance 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> cycles. In addition, for automotive application and further scaling down, we confirmed the function of eMRAM macro at the elevated temperature of $160^{\circ}\mathrm{C}$, and achieved the low short fail of 1ppm level for sub 10nm eMRAM pitch using the novel patterning technology, respectively.