Shinichi Takagi

High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using $\hbox{HfO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stacks Fabricated by Plasma Postoxidation

Rui Zhang, Po-Chin Huang, Ju-Chin Lin et al. · IEEE Transactions on Electron Devices · 2013 · 200 citations

Engineering, Electrical Engineering, Materials Science +17

High-Mobility Ge pMOSFET With 1-nm EOT $\hbox{Al}_{2} \hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stack Fabricated by Plasma Post Oxidation

Rui Zhang, Takashi Iwasaki, Noriyuki Taoka et al. · IEEE Transactions on Electron Devices · 2011 · 175 citations

Engineering, Electrical Engineering, Materials Science +17

Si Microring Resonator Crossbar Array for On-Chip Inference and Training of the Optical Neural Network

Shuhei Ohno, Rui Tang, Kasidit Toprasertpong et al. · ACS Photonics · 2022 · 145 citations

Engineering, Computer Engineering, Computer Science +17

Thin-body Ge-on-insulator p-channel MOSFETs with Pt germanide metal source/drain

Tatsuro Maeda, Keiji Ikeda, Shu Nakaharai et al. · Thin Solid Films · 2005 · 67 citations

Engineering, Electrical Engineering, Materials Science +14

Interface-controlled self-align source/drain Ge pMOSFETs using thermally-oxidized GeO<inf>2</inf> interfacial layers

Yosuke Nakakita, Ryosho Nakane, Takashi Sasada et al. · 2008 · 37 citations

Engineering, Electrical Engineering, Materials Science +17