Kasidit Toprasertpong

Author

Also Known As

K Toprasertpong, K. Toprasertpong, Kasidit TOPRASERTPONG, Kasidit Toprasertpong, Sugiyama, M., Toprasertpong Kasidit, Toprasertpong, K., Toprasertpong, Kasidit, Watanabe, K.

373

Publications

2.4K

Citations

H-Index

Concepts

All Affiliations

The University of Tokyo Tokyo University of Information Sciences National Institute of Advanced Industrial Science and Technology

About

Kasidit Toprasertpong is an author at The University of Tokyo specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	38	1.3K
2	Applied Physics	21	34	1.3K
3	Natural Sciences	1	1	97
4	Social Sciences	1	1	35
5	Chemistry	1	1	24

Kasidit Toprasertpong

Publications

Citations

H-Index

Page 1

	Year	Citations
Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory Kasidit Toprasertpong, Kento Tahara, Yukinobu Hikosaka, ACS Applied Materials & Interfaces	2022	132
Si Microring Resonator Crossbar Array for On-Chip Inference and Training of the Optical Neural Network Shuhei Ohno, Rui Tang, Kasidit Toprasertpong, ACS Photonics EngineeringIntegrated CircuitsMicro-optical ComponentProgrammable PhotonicsOptical Computing	2022	131
Direct Observation of Interface Charge Behaviors in FeFET by Quasi-Static Split C-V and Hall Techniques: Revealing FeFET Operation Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi EngineeringSemiconductor DeviceMagnetismFerroelectric ApplicationNanoelectronics	2019	119
High responsivity in MoS2 phototransistors based on charge trapping HfO2 dielectrics Roda Nur, Takashi Tsuchiya, Kasidit Toprasertpong, Communications Materials Optical MaterialsEngineeringTransition Metal DichalcogenidesOptoelectronic DevicesHfo2 Dielectrics	2020	100
Improved Ferroelectric/Semiconductor Interface Properties in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Ferroelectric FETs by Low-Temperature Annealing Kasidit Toprasertpong, Kento Tahara, Taichiro Fukui, IEEE Electron Device Letters EngineeringCrystal Growth TechnologyFerroelectric Thin FilmsMultiferroicsFerroelectric Application	2020	97
100-period, 1.23-eV bandgap InGaAs/GaAsP quantum wells for high-efficiency GaAs solar cells: toward current-matched Ge-based tandem cells Hiromasa Fujii, Kasidit Toprasertpong, Yunpeng Wang, Progress in Photovoltaics Research and Applications Wide-bandgap SemiconductorElectrical EngineeringIngaas/gaasp Multiple QuantumEngineeringPhysics	2013	93
Reservoir computing on a silicon platform with a ferroelectric field-effect transistor Kasidit Toprasertpong, Eishin Nako, Zeyu Wang, Communications Engineering	2022	84
Memory Window in Ferroelectric Field-Effect Transistors: Analytical Approach Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi IEEE Transactions on Electron Devices	2022	78
Absorption threshold extended to 1.15 eV using InGaAs/GaAsP quantum wells for over‐50%‐efficient lattice‐matched quad‐junction solar cells Kasidit Toprasertpong, Hiromasa Fujii, Tomos Thomas, Progress in Photovoltaics Research and Applications Wide-bandgap SemiconductorEngineeringBandgap Mqw CellIngaas/gaasp Quantum WellsSemiconductor Materials	2015	71
On the strong coupling of polarization and charge trapping in HfO2/Si-based ferroelectric field-effect transistors: overview of device operation and reliability Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi Applied Physics A Electrical EngineeringEngineeringPhysicsFerroelectric ApplicationElectronic Engineering	2022	64

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