In this paper, we examine, in more detail, the strong correlation between the distribution of threshold voltage ( VT ) and the average channel length ( L̅ _C ̅) discovered in Part I of this paper. Based on the results of statistical analysis, we investigate an approach whereby the line-edge-roughness (LER)-induced distribution of VT can be reconstructed based on the convolution of the distribution of ( L̅ _C ̅) and the subdistributions of VT at particular values of ( L̅ _C ̅). Further analysis demonstrates that the actual shape of the subdistributions has little impact on the accuracy of the reconstruction. This result allows a fast and economical semianalytical approach for the simulation of LER-induced VT variability, based on the nonlinear transformation of the distribution of ( L̅ _C ̅) into the distribution of VT using the channel length dependence of the threshold voltage as a mapping function. The accuracy of the semianalytical approach has been confirmed by comparison with the distributions of VT obtained for a broad range of conventional and novel MOSFETs using comprehensive 3-D simulations.

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