Investigation of the RTN Distribution of Nanoscale MOS Devices From Subthreshold to On-State

Salvatore Amoroso, Christian Monzio Compagnoni, A. Ghetti, +4

IEEE Electron Device Letters

Electrical EngineeringRtn DistributionEngineeringSemiconductor DevicePhysics +11

Insight Into Electron Traps and Their Energy Distribution Under Positive Bias Temperature Stress and Hot Carrier Aging

Meng Duan, J. F. Zhang, Zhigang Ji, +7

IEEE Transactions on Electron Devices

Accuracy and Issues of the Spectroscopic Analysis of RTN Traps in Nanoscale MOSFETs

Fikru Adamu-Lema, Christian Monzio Compagnoni, Salvatore Amoroso, +6

IEEE Transactions on Electron Devices

Electrical EngineeringRtn TrapsEngineeringTunneling MicroscopyPhysics +12

3-D Statistical Simulation Comparison of Oxide Reliability of Planar MOSFETs and FinFET

Louis Gerrer, Salvatore Amoroso, Stanislav Markov, +2

IEEE Transactions on Electron Devices

EngineeringVlsi DesignOxide ReliabilityNew Transistor ArchitecturesReliability Engineering +16

Accurate Simulation of Transistor-Level Variability for the Purposes of TCAD-Based Device-Technology Cooptimization

Louis Gerrer, A. R. Brown, Campbell Millar, +9

IEEE Transactions on Electron Devices

Tcad-based Device-technology CooptimizationEngineeringVlsi DesignElectronic Design AutomationAccurate Simulation +16

Hot carrier aging and its variation under use-bias: Kinetics, prediction, impact on Vdd and SRAM

Meng Duan, J. F. Zhang, Azrif Manut, +10

Low BiasesHot CarrierElectrical EngineeringEngineeringHardware Reliability +8

Interplay between statistical reliability and variability: A comprehensive transistor-to-circuit simulation technology

Louis Gerrer, C. Millar, A. Asenov, +8

EngineeringSimulationComputational ChemistryReliability EngineeringUncertainty Quantification +21

RTN and BTI in nanoscale MOSFETs: A comprehensive statistical simulation study

Salvatore Amoroso, Louis Gerrer, Stanislav Markov, +2

Solid-State Electronics

Device ModelingElectrical EngineeringEngineeringPhysicsNanotechnology +6

Statistical Interactions of Multiple Oxide Traps Under BTI Stress of Nanoscale MOSFETs

Stanislav Markov, Salvatore Amoroso, Louis Gerrer, +2

IEEE Electron Device Letters

Random Dopant FluctuationsEngineeringCharge TransportSemiconductor DeviceTrapped Charges +15

Carbon-related pBTI degradation mechanisms in GaN-on-Si E-mode MOSc-HEMT

A. G. Viey, W. Vandendaele, M.-A. Jaud, +14

SemiconductorsWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering +11