Stanislav Markov - Concepedia

Author

Stanislav Markov

University of Glasgow ORCID

Also Known As

S Markov, S. Markov, Stanislav Markov

Publications

791

Citations

H-Index

Concepts

All Affiliations

University of Glasgow University of Hong Kong Gold Standard Simulations (United Kingdom)University of Bremen

About

Stanislav Markov is an author at University of Glasgow specializing in engineering, applied physics, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	17	601
2	Applied Physics	14	16	583
3	Electrical Engineering	13	15	492
4	Computer Engineering	3	3	89
5	Chemistry	1	1	76

Stanislav Markov

Publications

725

Citations

H-Index

Page 1

	Year	Citations
Statistical Threshold-Voltage Variability in Scaled Decananometer Bulk HKMG MOSFETs: A Full-Scale 3-D Simulation Scaling Study Xingsheng Wang, Andrew R. Brown, Niza Mohd Idris, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringEngineeringHigh Voltage EngineeringStatistical Threshold-voltage Variability	2011	134
Towards Polyoxometalate‐Cluster‐Based Nano‐Electronics Laia Vilà‐Nadal, Scott G. Mitchell, Stanislav Markov, Chemistry - A European Journal Materials ScienceFunctional NanomaterialsNon-volatile MemoryEngineeringElectronic Materials	2013	76
Enhanced Photovoltaic Properties Induced by Ferroelectric Domain Structures in Organometallic Halide Perovskites Fuzhen Bi, Stanislav Markov, Rulin Wang, The Journal of Physical Chemistry C	2017	60
Permittivity of Oxidized Ultra-Thin Silicon Films From Atomistic Simulations Stanislav Markov, Gabriele Penazzi, YanHo Kwok, IEEE Electron Device Letters EngineeringThin Film Process TechnologySilicon On InsulatorSemiconductorsDftb Hamiltonian	2015	50
Statistical Variability in Fully Depleted SOI MOSFETs Due to Random Dopant Fluctuations in the Source and Drain Extensions Stanislav Markov, B. Cheng, Asen Asenov IEEE Electron Device Letters Device ModelingLow-power ElectronicsElectrical EngineeringRandom Dopant FluctuationsEngineering	2012	45
Atomic Level Modeling of Extremely Thin Silicon-on-Insulator MOSFETs Including the Silicon Dioxide: Electronic Structure Stanislav Markov, Bálint Aradi, ChiYung Yam, IEEE Transactions on Electron Devices Device ModelingHydrogen PassivationElectrical EngineeringSemiconductor DeviceEngineering	2015	43
Statistical variability in scaled generations of n-channel UTB-FD-SOI MOSFETs under the influence of RDF, LER, OTF and MGG Stanislav Markov, Anis Suhaila Mohd Zain, B. Cheng, Device ModelingSemiconductor TechnologyElectrical EngineeringEngineeringElectronic Engineering	2012	34
Si–SiO<sub>2</sub> interface band‐gap transition – effects on MOS inversion layer Stanislav Markov, Peter V. Sushko, Scott Roy, physica status solidi (a) SemiconductorsOxide HeterostructuresSemiconductor TechnologyEngineeringPhysics	2008	33
Accuracy and Issues of the Spectroscopic Analysis of RTN Traps in Nanoscale MOSFETs Fikru Adamu-Lema, Christian Monzio Compagnoni, Salvatore Amoroso, IEEE Transactions on Electron Devices Electrical EngineeringRtn TrapsEngineeringTunneling MicroscopyPhysics	2013	30
3-D Statistical Simulation Comparison of Oxide Reliability of Planar MOSFETs and FinFET Louis Gerrer, Salvatore Amoroso, Stanislav Markov, IEEE Transactions on Electron Devices EngineeringVlsi DesignOxide ReliabilityNew Transistor ArchitecturesReliability Engineering	2013	24

Page 1