Wenwu Wang - Concepedia

Author

Wenwu Wang

Chinese Academy of Sciences

Also Known As

Wen-Wu Wang, Wen-wu Wang, Wenwu WANG, Wenwu Wang

Publications

1.1K

Citations

H-Index

Concepts

All Affiliations

Chinese Academy of Sciences Institute of Microelectronics University of Chinese Academy of Sciences North China University of Technology General Research Institute for Nonferrous Metals (China)

About

Wenwu Wang is an author at Chinese Academy of Sciences specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	22	645
2	Applied Physics	12	14	457
3	Chemical Engineering	5	5	87
4	Chemistry	4	4	79
5	Construction Engineering	1	1	16

Wenwu Wang

Publications

840

Citations

H-Index

Page 1

	Year	Citations
Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F<sup>2</sup> by Monolithic Stacking Xinlv Duan, Junxiao Feng, Jiebin Niu, IEEE Transactions on Electron Devices Electrical EngineeringNovel Vertical Channel-all-aroundEngineeringIn-ga-zn-o FetEmerging Memory Technology	2022	154
Hierarchical Mo-decorated Co3O4 nanowire arrays on Ni foam substrates for advanced electrochemical capacitors Haonan Zhang, Yuejiao Chen, Wenwu Wang, Journal of Materials Chemistry A	2013	89
Microbial assemblies with distinct trophic strategies drive changes in soil microbial carbon use efficiency along vegetation primary succession in a glacier retreat area of the southeastern Tibetan Plateau Shenglan Ma, Wanze Zhu, Wenwu Wang, The Science of The Total Environment BiogeochemistryEngineeringSoil Carbon CycleMicrobial EcologySoil Microbiology	2023	56
Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD with High Read Current of 32.8 μA/μm (V<sub>th</sub> + 1 V), Well-performed Thermal Stability up to 120 ℃ for Low Latency, High-density 2T0C 3D DRAM Application Kailiang Huang, Xinlv Duan, Junxiao Feng, 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) Semiconductor TechnologyActive FootprintElectrical EngineeringSemiconductor DeviceDram Application	2022	47
Design impact on the performance of Ge PIN photodetectors Xuewei Zhao, M. Moeen, Muhammet S. Toprak, Journal of Materials Science Materials in Electronics PhotonicsElectrical EngineeringEngineeringDesign ImpactPhotodetectors	2019	44
Physical origin of dipole formation at high-k/SiO2 interface in metal-oxide-semiconductor device with high-k/metal gate structure Xiaolei Wang, Kai Han, Wenwu Wang, Applied Physics Letters Dipole FormationElectrical EngineeringEngineeringPhysicsNanoelectronics	2010	41
Experimental investigation on oxidation kinetics of germanium by ozone Xiaolei Wang, Zhiqian Zhao, Jinjuan Xiang, Applied Surface Science Advanced Oxidation ProcessEnvironmental ChemistryEngineeringExperimental InvestigationOxidation Resistance	2016	34
Comprehensive understanding of the effect of electric dipole at high-k/SiO2 interface on the flatband voltage shift in metal-oxide-semiconductor device Xiaolei Wang, Kai Han, Wenwu Wang, Applied Physics Letters Semiconductor TechnologyElectrical EngineeringEngineeringOxide ElectronicsBias Temperature Instability	2010	30
Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD Yong Du, Zhenzhen Kong, Muhammet S. Toprak, Nanomaterials	2021	28
Investigation on the dominant key to achieve superior Ge surface passivation by GeO based on the ozone oxidation Xiaolei Wang, Jinjuan Xiang, Wenwu Wang, Applied Surface Science Advanced Oxidation ProcessEnvironmental ChemistryChemical EngineeringOzone OxidationEngineering	2015	22

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