Design impact on the performance of Ge PIN photodetectors

Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing

M. T. Currie, Srikanth Samavedam, T. A. Langdo et al. · Applied Physics Letters · 1998 · 551 citations

Natural Sciences, Materials Engineering, Materials Science +17

31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate

Tao Yin, Rami Cohen, Mike Morse et al. · Optics Express · 2007 · 395 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates

Lorenzo Colace, G. Masini, Gaetano Assanto et al. · Applied Physics Letters · 2000 · 234 citations

Engineering, Electrical Engineering, Materials Science +17

−1 V bias 67 GHz bandwidth Si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond

Hong Tao Chen, Peter Verheyen, Peter De Heyn et al. · Optics Express · 2016 · 186 citations · Full text

Engineering, Electrical Engineering, Physics +17

New infrared detector on a silicon chip

Serge Luryi, A. Kastalsky, J. C. Bean · IEEE Transactions on Electron Devices · 1984 · 184 citations

Engineering, Electrical Engineering, Materials Science +17