Publication | Open Access
−1 V bias 67 GHz bandwidth Si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond
183
Citations
14
References
2016
Year
EngineeringP-i-n PhotodetectorOptoelectronic DevicesFf CapacitanceP-i-n Photodetector OperatingRf SemiconductorOptical PropertiesGuided-wave OpticPhotonic Integrated CircuitOptical CommunicationPhotonicsElectrical Engineering-1 VMicroelectronicsPhotonic DeviceMicrowave PhotonicsOptical LinksApplied PhysicsOptoelectronics
We demonstrate a 67 GHz bandwidth silicon-contacted germanium waveguide p-i-n photodetector operating at -1 V with 6.8 fF capacitance. The dark current is below 4 nA. The responsivity is 0.74 A/W at 1550 nm and 0.93 A/W at 1310 nm wavelength. 56 Gbps on-off-keying data reception is demonstrated with clear open eye diagrams in both the C-band and O-band.
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