K. Early

Absence of resolution degradation in X-ray lithography for λ from 4.5nm to 0.83nm

K. Early, Mark L. Schattenburg, Henry I. Smith · Microelectronic Engineering · 1990 · 70 citations

Materials Science, Engineering, Electron-beam Lithography +9

89-GHz f/sub T/ room-temperature silicon MOSFETs

Ran Yan, K.F. Lee, Dae‐Young Jeon et al. · IEEE Electron Device Letters · 1992 · 28 citations

Room Temperature, Electrical Engineering, Intrinsic Transit Time +12

High performance 0.1- mu m room temperature Si MOSFETs

Ran Yan, K.F. Lee, Dae‐Young Jeon et al. · 2003 · 22 citations

Room Temperature, Electrical Engineering, Engineering +9

Fabrication and characterization of high-flatness mesa-etched silicon nitride x-ray masks

A. Moel, K. Early, Y. Ku et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1991 · 18 citations

Mask Design Requirements, Engineering, Electron-beam Lithography +23

Characterization of AZ PN114 resist for high resolution using electron-beam and soft-x-ray projection lithographies

K. Early, D. M. Tennant, Dae‐Young Jeon et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1992 · 13 citations

Optical Materials, X-ray Spectroscopy, Engineering +20