A. B. McLean - Concepedia

Author

A. B. McLean

IBM Research - Thomas J. Watson Research Center

Also Known As

A B McLean, A. B. McLean, A.B. McLean, A.B. Mclean, AB McLean, McLean, A.B.

Publications

962

Citations

H-Index

Concepts

All Affiliations

IBM Research - Thomas J. Watson Research Center IBM (United States)Cardiff University Fritz Haber Institute of the Max Planck Society Trinity College Dublin

About

A. B. McLean is an author at IBM Research - Thomas J. Watson Research Center specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	22	711
2	Applied Physics	15	21	700
3	Natural Sciences	5	5	214
4	Chemistry	5	5	128
5	Chemical Engineering	1	1	32

A. B. McLean

Publications

711

Citations

H-Index

Page 1

	Year	Citations
Fine structure of the Ca 2<i>p</i>x-ray-absorption edge for bulk compounds, surfaces, and interfaces F. J. Himpsel, U. O. Karlsson, A. B. McLean, Physical review. B, Condensed matter X-ray CrystallographyX-ray SpectroscopyEngineeringBulk CompoundsFine Structure	1991	95
Schottky contacts to cleaved GaAs (110) surfaces. I. Electrical properties and microscopic theories A. B. McLean, R. H. Williams Journal of Physics C Solid State Physics SemiconductorsElectrical EngineeringSchottky Barrier HeightEngineeringPhysics	1988	80
Electronic and structural properties of a discommensurate monolayer system: GaAs(110)-(1×1)Bi A. B. McLean, R. M. Feenstra, A. Taleb‐Ibrahimi, Physical review. B, Condensed matter EngineeringElectronic PropertiesSemiconductor NanostructuresSemiconductorsIi-vi Semiconductor	1989	62
Schottky-barrier height determination in the presence of interfacial disorder A. B. McLean, I. M. Dharmadasa, R. H. Williams Semiconductor Science and Technology Electrical EngineeringInterfacial DisorderEngineeringSemiconductor DevicePhysics	1986	55
Structural and electronic properties of Bi/GaAs(110) R. Ludeke, A. Taleb‐Ibrahimi, R. M. Feenstra, Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena SemiconductorsMaterials ScienceBi OverlayersIi-vi SemiconductorEngineering	1989	53
Surface core-level binding-energy shifts for the cleaved GaP(110) surface A. B. McLean, R. Ludeke Physical review. B, Condensed matter Materials ScienceSurface CharacterizationIi-vi SemiconductorEngineeringPhysics	1989	48
Electronic structure of Si(111)-B(√3 × √3 )<i>R</i>30° studied by Si 2<i>p</i>and B 1<i>s</i>core-level photoelectron spectroscopy A. B. McLean, L. J. Terminello, F. J. Himpsel Physical review. B, Condensed matter EngineeringChemistrySilicon On InsulatorElectronic StructureEmpty Surface Orbital	1990	38
Schottky barriers and interface reactions on chemically etched n-CdTe single crystals I. M. Dharmadasa, A. B. McLean, M.H. Patterson, Semiconductor Science and Technology EngineeringMetal-cdte ContactsSolid-state ChemistryChemistryIi-vi Semiconductor	1987	32
Resonant inverse-photoemission study of layer-dependent surface states at the epitaxial GaAs(110)-Bi interface A. B. McLean, F. J. Himpsel Physical review. B, Condensed matter SemiconductorsIi-vi SemiconductorEngineeringOrdered GaasPhysics	1989	30
Core-level photoemission investigation of atomic-fluorine adsorption on GaAs(110) A. B. McLean, L. J. Terminello, F. R. McFeely Physical review. B, Condensed matter SemiconductorsSurface CharacterizationO AdsorptionAtomic-fluorine AdsorptionEngineering	1989	29

Page 1