Electronic and structural properties of a discommensurate monolayer system: GaAs(110)-(1×1)Bi

Abstract

We report the structural and electronic properties of a new ordered Bi(1\ifmmode\times\else\texttimes\fi{}1) overlayer on cleaved GaAs(110) surfaces. Although some structural similarities exist between the ordered Bi monolayer and that for Sb, our studies show the following novel features: a periodic one-dimensional array of misfit dislocations, which appear to generate acceptor states that ``pin'' the Fermi level on n-type GaAs, and Bi-derived valence and conduction bands that extend into the GaAs band gap and are separated by 0.7 eV.