Schottky-barrier height determination in the presence of interfacial disorder

Abstract

By including the effects of electron-hole recombination and electron trapping in the analysis of the transport properties of Schottky diodes it is possible to obtain a more accurate estimate of the Schottky-barrier height. The magnitude of the barrier height obtained from an analysis of the forward I-V characteristics of CdTe Schottky diodes is in better agreement with that obtained from C-V measurements than that obtained by using the conventional procedure of introducing an ideality factor into the 'ideal diode' equation.