Sharon Cui

Total-Ionizing-Dose Radiation Effects in AlGaN/GaN HEMTs and MOS-HEMTs

Xiao Sun, Omair I. Saadat, Jin Chen et al. · IEEE Transactions on Nuclear Science · 2013 · 80 citations

Medicine, Radiology, Radiation Dosimetry +12

Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method

Xiao Sun, Omair I. Saadat, Kuei-Shu Chang-Liao et al. · Applied Physics Letters · 2013 · 71 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Total Ionizing Dose (TID) Effects in Extremely Scaled Ultra-Thin Channel Nanowire (NW) Gate-All-Around (GAA) InGaAs MOSFETs

Shufeng Ren, Mengwei Si, Kai Ni et al. · IEEE Transactions on Nuclear Science · 2015 · 32 citations

Engineering, Electrical Engineering, Materials Science +17

Ga 2 O 3 ( Gd 2 O 3 ) ∕ Si 3 N 4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion

J. F. Zheng, Wilman Tsai, T. D. Lin et al. · Applied Physics Letters · 2007 · 28 citations

Engineering, Electrical Engineering, Materials Science +17

AC Transconductance Dispersion (ACGD): A Method to Profile Oxide Traps in MOSFETs Without Body Contact

Xiao Sun, Sharon Cui, A. Alian et al. · IEEE Electron Device Letters · 2012 · 28 citations

Engineering, Electrical Engineering, Electronic Materials +16