J. F. Zheng

Ga 2 O 3 ( Gd 2 O 3 ) ∕ Si 3 N 4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion

J. F. Zheng, Wilman Tsai, T. D. Lin et al. · Applied Physics Letters · 2007 · 28 citations

Engineering, Electrical Engineering, Materials Science +17

Optically controlled electroabsorption modulators for unconstrained wavelength conversion

V.A. Sabnis, Hilmi Volkan Demir, Onur Fidaner et al. · Applied Physics Letters · 2004 · 25 citations

Engineering, Electrical Engineering, Optical Materials +16

Self-Aligning Planarization and Passivation for Integration Applications in III–V Semiconductor Devices

Hilmi Volkan Demir, J. F. Zheng, V.A. Sabnis et al. · IEEE Transactions on Semiconductor Manufacturing · 2005 · 24 citations

Engineering, Electrical Engineering, Materials Science +17

MOCVD $\hbox{Ge}_{3}\hbox{Sb}_{2}\hbox{Te}_{5}$ for PCM Applications

J. F. Zheng, J.R. Reed, Carl Schell et al. · IEEE Electron Device Letters · 2010 · 16 citations

Engineering, Materials Engineering, Materials Science +17

Scalable Wavelength-Converting Crossbar Switches

Hilmi Volkan Demir, V.A. Sabnis, J. F. Zheng et al. · IEEE Photonics Technology Letters · 2004 · 15 citations · Full text

Engineering, Electrical Engineering, Materials Science +17