K. M. Yin

Germanium p-Channel FinFET Fabricated by Aspect Ratio Trapping

M.J.H. van Dal, G. Vellianitis, B. Duriez et al. · IEEE Transactions on Electron Devices · 2014 · 67 citations

Engineering, Electrical Engineering, Materials Science +16

Demonstration of scaled Ge p-channel FinFETs integrated on Si

M.J.H. van Dal, G. Vellianitis, G. Doornbos et al. · 2012 · 44 citations

Engineering, Electrical Engineering, Electronic Materials +11

Scaled p-channel Ge FinFET with optimized gate stack and record performance integrated on 300mm Si wafers

B. Duriez, G. Vellianitis, M.J.H. van Dal et al. · 2013 · 44 citations

Engineering, Electrical Engineering, Materials Science +15

Field-Effect Mobility of InAs Surface Channel nMOSFET With Low <inline-formula> <tex-math notation="LaTeX">$D_{\rm it}$ </tex-math></inline-formula> Scaled Gate-Stack

Shih‐Wei Wang, T. Vasen, G. Doornbos et al. · IEEE Transactions on Electron Devices · 2015 · 15 citations

Engineering, Electrical Engineering, Materials Science +14

Effects of $\hbox{Al}_{2}\hbox{O}_{3}$ Dielectric Cap and Nitridation on Device Performance, Scalability, and Reliability for Advanced High- $\kappa$/Metal Gate pMOSFET Applications

Vincent S. Chang, Lars‐Åke Ragnarsson, H.Y. Yu et al. · IEEE Transactions on Electron Devices · 2007 · 15 citations

Engineering, Electrical Engineering, Materials Science +17