Tsung-Yi Huang

Low Turn-on voltage dual metal AlGaN/GaN Schottky barrier diode

Ting-Fu Chang, Chih‐Fang Huang, Tsung‐Yu Yang et al. · Solid-State Electronics · 2014 · 31 citations

Engineering, Electrical Engineering, Materials Science +10

0.18um BCD technology with best-in-class LDMOS from 6 V to 45 V

Tsung-Yi Huang, Wen-Yi Liao, Ching-Yao Yang et al. · 2014 · 28 citations

Engineering, Electrical Engineering, Microelectronics +13

Effect of Drift-Region Concentration on Hot-Carrier-Induced $R_{\rm on}$ Degradation in nLDMOS Transistors

Jone F. Chen, J. R. Lee, Kuo-Ming Wu et al. · IEEE Electron Device Letters · 2008 · 28 citations

Engineering, Electrical Engineering, Materials Science +15

High performance In<inf>0.53</inf>Ga<inf>0.47</inf>As FinFETs fabricated on 300 mm Si substrate

M. L. Huang, S. W. Chang, M. K. Chen et al. · 2016 · 23 citations

Engineering, Electrical Engineering, Electronic Materials +8

off-State Avalanche-Breakdown-Induced on-Resistance Degradation in Lateral DMOS Transistors

Jone F. Chen, J. R. Lee, Kuo-Ming Wu et al. · IEEE Electron Device Letters · 2007 · 21 citations

Engineering, Electrical Engineering, Materials Science +17