0.18um BCD technology with best-in-class LDMOS from 6 V to 45 V

Abstract

We propose a novel nLDMOS structure and a design concept in BCD technology with the best-in-class performance. The drift profile is optimized and the multi-oxide in the drift region is adopted to approach the RESURF limit of on-resistance vs. BVdss characteristic (i.e., 36V DMOS has a Ron_sp of 20mohm-mm2 with a BVdss of 50V; 45V DMOS has a Ron_sp of 28mohm-mm2 with a BVdss of 65V). Moreover, this modification requires merely three extra masks in the Non-Epitaxy LV process to achieve this improvement. Therefore it is not only a high performance but also a low cost solution.