Ting-Fu Chang

Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs

Huolin Huang, Yung C. Liang, Ganesh S. Samudra et al. · IEEE Transactions on Power Electronics · 2013 · 120 citations

Surface-trapped Electron Charges, Electron Density, Electrical Engineering +14

Phenomenon of Drain Current Instability on p-GaN Gate AlGaN/GaN HEMTs

Ting-Fu Chang, Tsung-Chieh Hsiao, Chih‐Fang Huang et al. · IEEE Transactions on Electron Devices · 2014 · 54 citations

Wide-bandgap Semiconductor, Electrical Engineering, Drain Biases +9

6.5 V High Threshold Voltage AlGaN/GaN Power Metal-Insulator-Semiconductor High Electron Mobility Transistor Using Multilayer Fluorinated Gate Stack

Yun-Hsiang Wang, Yung C. Liang, Ganesh S. Samudra et al. · IEEE Electron Device Letters · 2015 · 53 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +12

Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics

Yun-Hsiang Wang, Yung C. Liang, Ganesh S. Samudra et al. · Semiconductor Science and Technology · 2013 · 37 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Low Turn-on voltage dual metal AlGaN/GaN Schottky barrier diode

Ting-Fu Chang, Chih‐Fang Huang, Tsung‐Yu Yang et al. · Solid-State Electronics · 2014 · 31 citations

Electrical Engineering, Engineering, Applied Physics +2