S. Fan

Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET

N. Loubet, Terence B. Hook, P. Montanini et al. · 2017 · 988 citations

Engineering, Electrical Engineering, Microelectronics +15

A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

Ruijie Xie, P. Montanini, Kerem Akarvardar et al. · 2016 · 144 citations

Engineering, Electrical Engineering, Materials Science +15

Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications

Kangguo Cheng, A. Khakifirooz, P. Kulkarni et al. · 2009 · 104 citations

Engineering, Computer Engineering, Electrical Engineering +17

Tungsten and cobalt metallization: A material study for MOL local interconnects

V. Kamineni, M. Raymond, S. Siddiqui et al. · 2016 · 65 citations

Natural Sciences, Materials Engineering, Materials Science +17

Vertical-Transport Nanosheet Technology for CMOS Scaling beyond Lateral-Transport Devices

H. Jagannathan, Brett D. Anderson, C-W. Sohn et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 60 citations

Engineering, Computer Engineering, Electrical Engineering +16