Nobuyuki Mise

Physical model of the PBTI and TDDB of la incorporated HfSiON gate dielectrics with pre-existing and stress-induced defects

Motoyuki Sato, Naoto Umezawa, J. Shimokawa et al. · 2008 · 24 citations

Engineering, La Incorporation, Defect Tolerance +19

Symmetrical threshold voltage in complementary metal-oxide-semiconductor field-effect transistors with HfAlOx(N) achieved by adjusting Hf∕Al compositional ratio

Masaru Kadoshima, Arito Ogawa, Hiroyuki Ota et al. · Journal of Applied Physics · 2006 · 23 citations

Materials Science, Al Contents, Electrical Engineering +11

(111)-Faceted Metal Source and Drain for Aggressively Scaled Metal/High- $k$ MISFETs

Nobuyuki Mise, Shinji Migita, Yukimune Watanabe et al. · IEEE Transactions on Electron Devices · 2008 · 21 citations

Physical understanding of the reliability improvement of dual high-k CMOSFETs with the fifth element incorporation into HfSiON gate dielectrics

Motoyuki Sato, Naoto Umezawa, Nobuyuki Mise et al. · 2008 · 13 citations

Engineering, Physical Understanding, Semiconductor Device +16

A Novel Plasma Etching Tool with RF-Biased Faraday-Shield Technology: Chamber Surface Reaction Control in the Etching of Nonvolatile Materials

Manabu Edamura, Ken Yoshioka, Ryoji Nishio et al. · Japanese Journal of Applied Physics · 2003 · 11 citations

Engineering, Faraday Shield, Plasma Controllability +16