Yukimune Watanabe

Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface

Kunihiko Iwamoto, Yuuichi Kamimuta, Arito Ogawa et al. · Applied Physics Letters · 2008 · 159 citations

Dipole Formation, Electrical Engineering, Engineering +15

Intrinsic Origin of Electron Mobility Reduction in High-k MOSFETs - From Remote Phonon to Bottom Interface Dipole Scattering

Hiroyuki Ota, Akito Hirano, Yukimune Watanabe et al. · 2007 · 31 citations

Electrical Engineering, Intrinsic Origin, Engineering +13

(111)-Faceted Metal Source and Drain for Aggressively Scaled Metal/High- $k$ MISFETs

Nobuyuki Mise, Shinji Migita, Yukimune Watanabe et al. · IEEE Transactions on Electron Devices · 2008 · 21 citations

Achievement of Higher-k and High-Φ in Phase Controlled HfO2 Film Using Post Gate Electrode Deposition Annealing

Yukimune Watanabe, Hiroyuki Ota, Shinji Migita et al. · ECS Transactions · 2007 · 21 citations

Materials Science, Semiconductors, Electrical Engineering +15