T. A. Henry

Dependence of radiative efficiency and deep level defect incorporation on threading dislocation density for InGaN/GaN light emitting diodes

Andrew Armstrong, T. A. Henry, Daniel Koleske et al. · Applied Physics Letters · 2012 · 60 citations

Engineering, Electrical Engineering, Materials Science +17

The influence of Al composition on point defect incorporation in AlGaN

T. A. Henry, Andrew Armstrong, Andrew A. Allerman et al. · Applied Physics Letters · 2012 · 49 citations

Natural Sciences, Materials Engineering, Materials Science +8

Quantitative and depth-resolved deep level defect distributions in InGaN/GaN light emitting diodes

Andrew Armstrong, T. A. Henry, Daniel Koleske et al. · Optics Express · 2012 · 36 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Assessment of deep level defects in <i>m</i>-plane GaN grown by metalorganic chemical vapor deposition

T. A. Henry, Andrew Armstrong, Kathryn M. Kelchner et al. · Applied Physics Letters · 2012 · 21 citations

Engineering, Materials Engineering, Materials Science +17

Fabrication of self-aligned GaAs/AlGaAs and GaAs/InGaP microwave power heterojunction bipolar transistors

F. Ren, J. R. Lothian, S. J. Pearton et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1994 · 19 citations

Engineering, Electrical Engineering, Materials Science +17