Kathryn M. Kelchner - Concepedia

Author

Kathryn M. Kelchner

University of California, Santa Barbara

Also Known As

K. Kelchner, K. M. Kelchner, K.M. Kelchner, Kathryn Kelchner, Kathryn M Kelchner, Kathryn M. Kelchner

Publications

Citations

H-Index

Concepts

All Affiliations

University of California, Santa Barbara Mitsubishi Chemical (Japan)KTH Royal Institute of Technology Centre National de la Recherche Scientifique École Polytechnique

About

Kathryn M. Kelchner is an author at University of California, Santa Barbara specializing in applied physics, engineering, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	21	994
2	Applied Physics	18	22	1K
3	Electrical Engineering	13	14	773
4	Natural Sciences	2	2	52
5	Chemistry	1	1	26

Kathryn M. Kelchner

Publications

Citations

H-Index

Page 1

	Year	Citations
High-brightness polarized light-emitting diodes Elison Matioli, Stuart Brinkley, Kathryn M. Kelchner, Light Science & Applications White OledPhotonicsElectrical EngineeringNon-polar Gallium NitrideEngineering	2012	243
Continuous-wave Operation of AlGaN-cladding-free Nonpolar m-Plane InGaN/GaN Laser Diodes Robert M. Farrell, Daniel Feezell, Mathew C. Schmidt, Japanese Journal of Applied Physics Wide-bandgap SemiconductorPhotonicsElectrical EngineeringEngineeringCompound Semiconductor	2007	90
AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4 nm Anurag Tyagi, Robert M. Farrell, Kathryn M. Kelchner, Applied Physics Express Wide-bandgap SemiconductorOptical MaterialsEngineeringLaser ApplicationsMaximum Lasing Wavelength	2009	86
Blue-Green InGaN/GaN Laser Diodes on Miscut<i>m</i>-Plane GaN Substrate You-Da Lin, Matthew T. Hardy, Po Shan Hsu, Applied Physics Express Materials ScienceWide-bandgap SemiconductorElectrical EngineeringOptical MaterialsEngineering	2009	59
Photoexcited carrier recombination in wide <i>m</i>-plane InGaN/GaN quantum wells S. Marcinkevičius, Kathryn M. Kelchner, Leah Y. Kuritzky, Applied Physics Letters SemiconductorsPhotonicsWide-bandgap SemiconductorPhotoluminescenceEngineering	2013	51
Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202¯1¯) GaN substrates Arash Pourhashemi, Robert M. Farrell, Matthew T. Hardy, Applied Physics Letters Wide-bandgap SemiconductorPhotonicsElectrical EngineeringSemiconductor TechnologyGan Substrates	2013	45
<i>m</i>-Plane GaN-Based Blue Superluminescent Diodes Fabricated Using Selective Chemical Wet Etching Matthew T. Hardy, Kathryn M. Kelchner, You-Da Lin, Applied Physics Express Wide-bandgap SemiconductorElectrical EngineeringOptical MaterialsEngineeringSolid-state Lighting	2009	44
Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding Kathryn M. Kelchner, You Da Lin, Matthew T. Hardy, Applied Physics Express Wide-bandgap SemiconductorPhotonicsEngineeringSemiconductor LasersApplied Physics	2009	39
Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals Elison Matioli, Stuart Brinkley, Kathryn M. Kelchner, Applied Physics Letters White OledPhotonicsElectrical EngineeringSolid-state LightingEngineering	2011	39
Optical properties of extended and localized states in <i>m</i>-plane InGaN quantum wells S. Marcinkevičius, Kathryn M. Kelchner, Shuji Nakamura, Applied Physics Letters Categoryquantum ElectronicsTime-resolved Photoluminescence SpectroscopyQuantum PhotonicsEngineeringLuminescence Property	2013	36

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