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The influence of Al composition on point defect incorporation in AlGaN

T. A. Henry, Andrew Armstrong, Andrew A. Allerman, Mary H. Crawford

Applied Physics Letters · 2012 · 49 citations · 22 references

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Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation T. A. Henry, A. Armstrong, A. A. Allerman, M. H. Crawford; The influence of Al composition on point defect incorporation in AlGaN. Appl. Phys. Lett. 23 January 2012; 100 (4): 043509. https://doi.org/10.1063/1.3679681 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioApplied Physics Letters Search Advanced Search |Citation Search

References

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Demonstration of an ultraviolet 336 nm AlGaN multiple-quantum-well laser diode

Harumasa Yoshida, Yoji Yamashita, Masakazu Kuwabara et al. · Applied Physics Letters · 2008 · 239 citations

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