J. Benedict

Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation

J. Kedzierski, E. Nowak, T. Kanarsky et al. · 2003 · 171 citations

Electrical Engineering, Engineering, Total Gate Silicidation +9

High-Capacity, Self-Assembled Metal–Oxide–Semiconductor Decoupling Capacitors

Charles T. Black, K.W. Guarini, Y. Zhang et al. · IEEE Electron Device Letters · 2004 · 98 citations

Materials Science, Electrical Engineering, Wafer Scale Processing +13

Recent Developments in the use of the Tripod Polisher for TEM Specimen Preparation

J. Benedict, Ron Anderson, Stanley J. Klepeis · MRS Proceedings · 1991 · 91 citations

Materials Science, Tem Specimen Preparation, Tripod Polisher +8

High performance CMOS fabricated on hybrid substrate with different crystal orientations

Min Yang, M. Ieong, L. Shi et al. · 2004 · 89 citations

Electrical Engineering, Semiconductor Device, Engineering +14

Two gates are better than one [double-gate MOSFET process]

P. M. Solomon, K.W. Guarini, Yifan Zhang et al. · IEEE Circuits and Devices Magazine · 2003 · 81 citations

Dense Circuit Layouts, Electrical Engineering, Physical Design (Electronics) +11