S. Soliverès

1 ∕ f noise and percolation in carbon nanotube random networks

S. Soliverès, J. Gyani, C. Delseny et al. · Applied Physics Letters · 2007 · 48 citations

Engineering, Percolation Networks, Carbon-based Material +17

High performance 70nm gate length germanium-on-insulator pMOSFET with high-k/metal gate

K. Romanjek, Louis Hutin, C. Le Royer et al. · Solid-State Electronics · 2009 · 40 citations

Electrical Engineering, Engineering, Nanoelectronics +6

105nm Gate length pMOSFETs with high-K and metal gate fabricated in a Si process line on 200mm GeOI wafers

C. Le Royer, L. Clavelier, C. Tabone et al. · Solid-State Electronics · 2008 · 30 citations

Electrical Engineering, Geoi Wafers, Engineering +8

Impact of Ballistic and Quasi-Ballistic Transport on Performances of Double-Gate MOSFET-Based Circuits

S. Martinie, G. Le Carval, Daniela Munteanu et al. · IEEE Transactions on Electron Devices · 2008 · 30 citations

Engineering, Vlsi Design, Semiconductor Device +16

High-$\kappa$ and Metal-Gate pMOSFETs on GeOI Obtained by Ge Enrichment: Analysis of ON and OFF Performances

C. Le Royer, Benjamin Vincent, L. Clavelier et al. · IEEE Electron Device Letters · 2008 · 21 citations

Engineering, Integrated Circuits, Ge Enrichment +16