David Dobuzinsky

High-Performance Undoped-Body 8-nm-Thin SOI Field-Effect Transistors

Amlan Majumdar, Zhibin Ren, J.W. Sleight et al. · IEEE Electron Device Letters · 2008 · 37 citations

Engineering, Electrical Engineering, Materials Science +15

New ESCAP-type resist with enhanced etch resistance and its application to future DRAM and logic devices

Will Conley, William R. Brunsvold, Fred Buehrer et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1997 · 14 citations

Natural Sciences, Materials Engineering, Materials Science +15

Evidence of a shallow junction formation from plasma enhanced chemical vapor deposition of boron nitride and silicon boron nitride

Tue Nguyen, S. Nguyen, David Dobuzinsky · Applied Physics Letters · 1993 · 13 citations

Engineering, Electrical Engineering, Materials Engineering +17

New leakage mechanism in sub-5-nm oxynitride dielectrics

Tue Nguyen, D. Carl, S. Nguyen et al. · Applied Physics Letters · 1993 · 10 citations

Natural Sciences, Materials Engineering, Materials Science +17