X. Weng

Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm

Jeong‐Sun Moon, Daniel J. Curtis, S. Bui et al. · IEEE Electron Device Letters · 2010 · 148 citations

Engineering, Electrical Engineering, Materials Science +17

MgB2 thin films by hybrid physical–chemical vapor deposition

X. X. Xi, A. V. Pogrebnyakov, Shengyong Xu et al. · Physica C Superconductivity · 2007 · 117 citations

Natural Sciences, Materials Engineering, Materials Science +12

Advanced Scaling of Enhancement Mode High-K Gallium Nitride-on-300mm-Si(111) Transistor and 3D Layer Transfer GaN-Silicon Finfet CMOS Integration

Han Wui Then, M. Radosavljević, Pratik Koirala et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 66 citations

Engineering, Electrical Engineering, Materials Science +17

Evolution of structural and electronic properties of highly mismatched InSb films

X. Weng, R. S. Goldman, D. L. Partin et al. · Journal of Applied Physics · 2000 · 55 citations · Full text

Natural Sciences, Materials Science, Physics +17

Gate-All-Around Strained Si_0.4Ge_0.6 Nanosheet PMOS on Strain Relaxed Buffer for High Performance Low Power Logic Application

Ankur Agrawal, S. Chouksey, W. Rachmady et al. · 2020 · 50 citations

Engineering, Electrical Engineering, Materials Science +14