D. L. Partin - Concepedia

Author

D. L. Partin

General Motors (United States)

Also Known As

D L Partin, D. L. PARTIN, D. L. Partin, D. Partin, D.L. Partin, Dale L. Partin

112

Publications

1.9K

Citations

H-Index

Concepts

All Affiliations

General Motors (United States)Carnegie Mellon University Brown University Aptiv (United States)University of Maryland, College Park

About

D. L. Partin is an author at General Motors (United States) specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	23	47	1.5K
2	Engineering	22	46	1.5K
3	Natural Sciences	7	7	318
4	Chemistry	3	3	108
5	Chemical Engineering	1	1	10

D. L. Partin

Publications

1.6K

Citations

H-Index

Page 1

	Year	Citations
Lead salt quantum effect structures D. L. Partin IEEE Journal of Quantum Electronics Optical MaterialsEngineeringLead SaltCompositional SuperlatticesOptoelectronic Devices	1988	158
Growth and characterization of epitaxial bismuth films D. L. Partin, Joseph P. Heremans, Donald T. Morelli, Physical review. B, Condensed matter EngineeringCrystal Growth TechnologyThin Film Process TechnologyPure BismuthFilm Mobilities	1988	128
Narrow-gap semiconductor magnetic-field sensors and applications Joseph P. Heremans, D. L. Partin, C. M. Thrush, Semiconductor Science and Technology Wide-bandgap SemiconductorEngineeringMagnetic SensorNarrow-gap SemiconductorsSemiconductor Device	1993	79
Lead salt quantum well diode lasers D. L. Partin Superlattices and Microstructures Optical PumpingPhotonicsEngineeringPhysicsSemiconductor Lasers	1985	68
Lead-europium-selenide-telluride grown by molecular beam epitaxy D. L. Partin Journal of Electronic Materials Luminescent GlassOptical MaterialsChemistryMolecular Beam Epitaxy	1984	60
Single quantum well lead-europium-selenide-telluride diode lasers D. L. Partin Applied Physics Letters EngineeringLaser ScienceLaser ApplicationsOptoelectronic DevicesPbte Quantum	1984	56
Evolution of structural and electronic properties of highly mismatched InSb films X. Weng, R. S. Goldman, D. L. Partin, Journal of Applied Physics Materials ScienceSemiconductorsEngineeringDislocation InteractionPhysics	2000	55
Deep-level transient spectroscopy studies of Ni- and Zn-diffused vapor-phase-epitaxy <i>n</i>-GaAs D. L. Partin, J. W. Chen, A. G. Milnes, Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorElectrical EngineeringIi-vi SemiconductorEngineering	1979	54
Nonuniform current distribution in the neighborhood of a ferromagnetic domain wall in cobalt at 4.2 K D. L. Partin, M. Karnezos, L.C. deMenezes, Journal of Applied Physics Nonuniform Current DistributionMagnetic PropertiesEngineeringLow-dimensional MagnetismCurrent Density	1974	45
Growth of lead‐germanium‐telluride thin film structures by molecular beam epitaxy D. L. Partin Journal of Vacuum Science and Technology EngineeringLaser ApplicationsOptoelectronic DevicesThin Film Process TechnologySemiconductors	1982	44

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