P. Yu

Permanent single event functional interrupts (SEFIs) in 128- and 256-megabit synchronous dynamic random access memories (SDRAMs)

R. Koga, P. Yu, K.B. Crawford et al. · 2002 · 30 citations

Hardware Security, Affected Devices, Write Functions +11

SEE sensitivities of selected advanced flash and first-in-first-out memories

R. Koga, V. Tran, J. George et al. · 2005 · 30 citations

Non-volatile Memory, Engineering, Computer Architecture +17

Laser-induced and heavy ion-induced single-event transient (SET) sensitivity measurements on 139-type comparators

S. D. LaLumondiere, R. Koga, P. Yu et al. · IEEE Transactions on Nuclear Science · 2002 · 27 citations

Electrical Engineering, New Rm139 Device, 139-Type Comparators +15

Radiation Performance of 1 Gbit DDR SDRAMs Fabricated in the 90 nm CMOS Technology Node

Ray Ladbury, Melanie D. Berg, H. Kim et al. · 2006 · 22 citations · Full text

Total Ionizing Dose, Engineering, Vlsi Design +16

Proton and Heavy Ion Induced Semi-Permanent Upsets in Double Data Rate SDRAMs

R. Koga, P. Yu, S. Crain et al. · 2007 · 22 citations

Electrical Engineering, Semi-permanent Upset Sensitivity, Engineering +11