Tadayoshi Tsuchiya

High-Breakdown-Voltage and Low-Specific-on-Resistance GaN p–n Junction Diodes on Free-Standing GaN Substrates Fabricated Through Low-Damage Field-Plate Process

Yoshitomo Hatakeyama, Kazuki Nomoto, Akihisa Terano et al. · Japanese Journal of Applied Physics · 2013 · 115 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Ultrahigh‐speed growth of GaN by hydride vapor phase epitaxy

Takehiro Yoshida, Yuichi Oshima, Kazutoshi Watanabe et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2011 · 65 citations

Materials Engineering, Materials Science, Electrical Engineering +12

Effects of Traps Formed by Threading Dislocations on Off-State Breakdown Characteristics in GaN Buffer Layer in AlGaN/GaN Heterostructure Field-Effect Transistors

Akihiro Hinoki, Junjiroh Kikawa, Tomoyuki Yamada et al. · Applied Physics Express · 2007 · 46 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +9

Influence of Surface Recombination on Forward Current–Voltage Characteristics of Mesa GaN $\hbox{p}^{+}\hbox{n}$ Diodes Formed on GaN Free-Standing Substrates

Kazuhiro Mochizuki, Kazuki Nomoto, Yoshitomo Hatakeyama et al. · IEEE Transactions on Electron Devices · 2012 · 15 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

Simulation of Dislocation Configuration in Rare Gas Crystals

Yoshiaki Kogure, Tadayoshi Tsuchiya, Yosio Hiki · Journal of the Physical Society of Japan · 1987 · 14 citations

Materials Science, Modified Boundary Condition, Molecular Dynamics +15