P. Coppens

On the impact of carbon-doping on the dynamic Ron and off-state leakage current of 650V GaN power devices

P. Moens, P. Vanmeerbeek, Abhishek Banerjee et al. · 2015 · 109 citations

Engineering, Gan Power Devices, Power Electronics +16

An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric

P. Moens, C. Liu, Abhishek Banerjee et al. · 2014 · 106 citations

Dynamic Ron, Electrical Engineering, Engineering +12

Impact of Ti/Al atomic ratio on the formation mechanism of non-recessed Au-free Ohmic contacts on AlGaN/GaN heterostructures

A. Constant, J. Baele, P. Coppens et al. · Journal of Applied Physics · 2016 · 37 citations

Materials Science, Aluminium Nitride, Ti/al Atomic Ratio +14

Development of a robust 50V 0.35 μm based Smart Power Technology using trench isolation

F. De Pestel, P. Moens, Hedi Hakim et al. · 2004 · 35 citations

Hardware Security, Low-power Electronics, Electrical Engineering +15

(Invited) Intrinsic Reliability Assessment of 650V Rated AlGaN/GaN Based Power Devices: An Industry Perspective

P. Moens, Abhishek Banerjee, A. Constant et al. · ECS Transactions · 2016 · 25 citations · Full text

Engineering, Gan Power Devices, Power Electronics +16