J. Baele

XtreMOS : The First Integrated Power Transistor Breaking the Silicon Limit

P. Moens, F. Bauwens, J. Baele et al. · 2006 · 56 citations

Engineering, Electrical Engineering, Microelectronics +11

Impact of Ti/Al atomic ratio on the formation mechanism of non-recessed Au-free Ohmic contacts on AlGaN/GaN heterostructures

A. Constant, J. Baele, P. Coppens et al. · Journal of Applied Physics · 2016 · 37 citations

Engineering, Materials Engineering, Materials Science +17

UltiMOS: A local charge-balanced trench-based 600V super-junction device

P. Moens, F. Bogman, H. Ziad et al. · 2011 · 27 citations

Engineering, Electrical Engineering, Materials Science +10

Record-low on-Resistance for 0.35 μm based integrated XtreMOS<sup>TM</sup> Transistors

P. Moens, F. Bauwens, B. Desoete et al. · 2007 · 18 citations

Engineering, Electrical Engineering, Electronic Materials +7