UltiMOS: A local charge-balanced trench-based 600V super-junction device

Abstract

This paper for the first time reports on a novel “local” charge balanced trench-based super junction transistor. The local charge balance is achieved by selectively growing thin highly-doped n-type and p-type layers in a deep trench structure. The final charge-balanced trench structure is finished with an oxide-sealed airgap. Devices rated at 10A with V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">bd</sub> =730V and a Ron=23 mΩ.cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> are demonstrated.