G. H. Loechelt - Concepedia

Author

G. H. Loechelt

ON Semiconductor (United States)

Also Known As

G. H. Loechelt, G. Loechelt, G.H. Loechelt, Gary H. Loechelt, Gary Loechelt

Publications

257

Citations

H-Index

Concepts

All Affiliations

ON Semiconductor (United States)Motorola (United States)ON Semiconductor (Belgium)Arizona State University

About

G. H. Loechelt is an author at ON Semiconductor (United States) specializing in engineering, electrical engineering, and power electronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	209
2	Electrical Engineering	6	6	76
3	Applied Physics	4	4	146
4	Materials Science	3	3	133
5	Computer Engineering	2	2	26

G. H. Loechelt

Publications

235

Citations

H-Index

Page 1

	Year	Citations
Polarized off-axis Raman spectroscopy: A technique for measuring stress tensors in semiconductors G. H. Loechelt, N. Cave, J. Menéndez Journal of Applied Physics EngineeringMechanical EngineeringSurface-enhanced Raman ScatteringResidual StressSpectroscopic Property	1999	66
Measuring the tensor nature of stress in silicon using polarized off-axis Raman spectroscopy G. H. Loechelt, N. Cave, J. Menéndez Applied Physics Letters EngineeringMechanical EngineeringResidual StressSilicon On InsulatorTensor Nature	1995	35
Measurement and modeling of boron diffusion in Si and strained Si1−<i>x</i>Ge<i>x</i> epitaxial layers during rapid thermal annealing G. H. Loechelt, G. Tam, John Steele, Journal of Applied Physics Materials ScienceSemiconductorsSemiconductor TechnologyBoron DiffusionEngineering	1993	32
UltiMOS: A local charge-balanced trench-based 600V super-junction device P. Moens, F. Bogman, H. Ziad,	2011	26
Process & design impact on BV<sub>DSS</sub> stability of a shielded gate trench power MOSFET Zia Hossain, Bhavani Burra, James Sellers, Device ModelingN-channel ChargeElectrical EngineeringEngineeringDesign Impact	2014	15
A computational load-pull system for evaluating RF and microwave power amplifier technologies G. H. Loechelt, P.A. Blakey EngineeringRadio FrequencyPower Optimization (Eda)Power ElectronicsElectromagnetic Compatibility	2002	15
RF Characteristics of a High-Performance, 10-fF/&lt;tex&gt;$muhbox m^2$&lt;/tex&gt;Capacitor in a Deep Trench Will Cai, S. Shastri, Gordy Grivna, IEEE Electron Device Letters Electrical EngineeringEngineeringHigh-frequency BypassRadio FrequencyDeep Trench	2004	13
Body-diode related losses in Shield-Plate FETs for SiP 12V-input DC/DC buck converters operating at high-frequency (4MHz) J. Roig, S. Mouhoubi, F. De Pestel, Electrical EngineeringEngineeringBody-diode Related LossesPower DeviceHigh Frequency Operation	2012	12
Direct numerical simulation of the large-signal RF behavior of power transistors P.A. Blakey, Michael G. Khazhinsky, G. H. Loechelt EngineeringRadio FrequencyDirect Numerical SimulationPower ElectronicsElectromagnetic Compatibility	2002	11
A high-speed silicon FET for efficient DC-DC power conversion G. H. Loechelt, Gordy Grivna, L. Golonka, Low-power ElectronicsElectrical EngineeringEngineeringPower DeviceEnergy Efficiency	2012	10

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