G. Tam

Impact of Deposition and Annealing Temperature on Material and Electrical Characteristics of ALD HfO[sub 2]

Dina H. Triyoso, R. Liu, D. Roan et al. · Journal of The Electrochemical Society · 2004 · 165 citations

Aluminium Nitride, Engineering, Thin Film Process Technology +18

Measurement and modeling of boron diffusion in Si and strained Si1−<i>x</i>Ge<i>x</i> epitaxial layers during rapid thermal annealing

G. H. Loechelt, G. Tam, John Steele et al. · Journal of Applied Physics · 1993 · 32 citations

Materials Science, Semiconductors, Semiconductor Technology +13

High-performance SiGe epitaxial base bipolar transistors produced by a reduced-pressure CVD reactor

M. Hong, E. de Frésart, John Steele et al. · IEEE Electron Device Letters · 1993 · 27 citations

Reduced-pressure Cvd Reactor, Electrical Engineering, Sige Devices +13

Analysis of direct wafer bond IGBTs with heavily doped N+ buffer layer

S.L. Tu, G. Tam, Pak Tam et al. · 2002 · 14 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +13

Universal scaling law for the condensation energy across a broad range of superconductor classes

J. S. Kim, G. Tam, G. R. Stewart · Physical Review B · 2015 · 13 citations · Full text

Superconducting Material, Critical Phenomenon, Engineering +25