Process & design impact on BV_DSS stability of a shielded gate trench power MOSFET

Abstract

This paper discusses the breakdown voltage (BV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DSS</sub> ) characteristics of an n-channel charge balanced shielded gate trench power MOSFET. The study emphasizes on elements that affect the BV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DSS</sub> stability of such devices to gain good control on design and process/device parameters in order to produce a robust product. Breakdown voltage (BV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DSS</sub> ) walk-in or walk-out can be observed when certain process (e.g., epi doping concentration) and design layout (e.g., termination) conditions are not in coherence.