Wallace Lin

A study on the physical mechanism in the recovery of gate capacitance to C/sub ox/ in implanted polysilicon MOS structures

S.-W. Lee, Chunlin Liang, C.-S. Pan et al. · IEEE Electron Device Letters · 1992 · 37 citations

Engineering, Electrical Engineering, Microelectronics +16

Role of source/drain junction on plasma induced gate charging damage in N MOSFET

Wallace Lin, G. Sery · 2002 · 15 citations

Engineering, Electrical Engineering, Physics +17

A simple method for extracting average doping concentration in the polysilicon and silicon surface layer near the oxide in polysilicon-gate MOS structures

Wallace Lin · IEEE Electron Device Letters · 1994 · 13 citations

Engineering, Electrical Engineering, Materials Science +17

A multiple-terminal gate charging model

Wallace Lin · IEEE Electron Device Letters · 2003 · 13 citations

Engineering, Electrical Engineering, Circuit Theory +15

On the measurement of parasitic capacitances of device with more than two external terminals using an LCR meter

Wallace Lin, P.C. Chan · IEEE Transactions on Electron Devices · 1991 · 12 citations

Engineering, Electrical Engineering, Instrumentation +16