Kedong Zhang

A 14nm logic technology featuring 2<sup>nd</sup>-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 µm<sup>2</sup> SRAM cell size

S. Natarajan, M. Agostinelli, Sheikh A. Akbar et al. · 2014 · 521 citations

-Generation Finfet, Rectangular Fins, Engineering +16

A 3-GHz 70mb SRAM in 65nm CMOS technology with integrated column-based dynamic power supply

Kedong Zhang, Uma Bhattacharya, Z. Chen et al. · 2005 · 272 citations

Low-power Electronics, 3-Ghz 70Mb, Electrical Engineering +11

Characterization of multi-bit soft error events in advanced SRAMs

J. Maiz, S.A. Hareland, Kedong Zhang et al. · 2004 · 242 citations

Hardware Security, Multi-bit Error Events, Engineering +14

A 65nm logic technology featuring 35nm gate lengths, enhanced channel strain, 8 Cu interconnect layers, low-k ILD and 0.57 μm/sub 2/ SRAM cell

Peng Bai, C. Auth, S. Balakrishnan et al. · 2005 · 230 citations

Electrical Engineering, Physical Design (Electronics), Engineering +15

Cutting performance and wear mechanism of nanoscale and microscale textured Al2O3/TiC ceramic tools in dry cutting of hardened steel

Youqiang Xing, Jianxin Deng, Jun Zhao et al. · International Journal of Refractory Metals and Hard Materials · 2013 · 223 citations

Materials Science, Engineering, Wear Mechanism +11