Kedong Zhang

A 14nm logic technology featuring 2<sup>nd</sup>-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 µm<sup>2</sup> SRAM cell size

S. Natarajan, M. Agostinelli, Sheikh A. Akbar et al. · 2014 · 532 citations

Engineering, Computer Engineering, Electrical Engineering +16

A 3-GHz 70mb SRAM in 65nm CMOS technology with integrated column-based dynamic power supply

Kedong Zhang, Uma Bhattacharya, Z. Chen et al. · 2005 · 272 citations

Engineering, Computer Engineering, Electrical Engineering +17

Characterization of multi-bit soft error events in advanced SRAMs

J. Maiz, S.A. Hareland, Kedong Zhang et al. · 2004 · 244 citations

Engineering, Computer Engineering, Electrical Engineering +16

A 65nm logic technology featuring 35nm gate lengths, enhanced channel strain, 8 Cu interconnect layers, low-k ILD and 0.57 μm/sub 2/ SRAM cell

C. Auth, S. Balakrishnan, M. Bost et al. · 2005 · 230 citations

Engineering, Computer Engineering, Electrical Engineering +17

Cutting performance and wear mechanism of nanoscale and microscale textured Al2O3/TiC ceramic tools in dry cutting of hardened steel

Youqiang Xing, Jianxin Deng, Jun Zhao et al. · International Journal of Refractory Metals and Hard Materials · 2013 · 227 citations

Engineering, Materials Engineering, Materials Science +16