Mutsuhiro Mori

A Planar-Gate High-Conductivity IGBT (HiGT) With Hole-Barrier Layer

Mutsuhiro Mori, Kazuhiro Oyama, Taiga Arai et al. · IEEE Transactions on Electron Devices · 2007 · 41 citations

Engineering, Electrical Engineering, Materials Science +17

1.7kV trench IGBT with deep and separate floating p-layer designed for low loss, low EMI noise, and high reliability

So Watanabe, Mutsuhiro Mori, Taiga Arai et al. · 2011 · 31 citations

Engineering, Electrical Engineering, Materials Science +14

Novel 3.3-kV advanced trench HiGT with low loss and low dv/dt noise

Yoshiaki Toyota, So Watanabe, Taiga Arai et al. · 2013 · 26 citations

Engineering, Electrical Engineering, Electronic Materials +6

Edge Termination With Enhanced Field-Limiting Rings Insensitive to Surface Charge for High-Voltage SiC Power Devices

Takashi Hirao, Hidekatsu Onose, Kan Yasui et al. · IEEE Transactions on Electron Devices · 2020 · 25 citations

Engineering, Electrical Engineering, Materials Science +17

High power density side-gate HiGT modules with sintered Cu having superior high-temperature reliability to sintered Ag

Tomoyasu Furukawa, Masaki Shiraishi, Yuusuke Yasuda et al. · 2017 · 15 citations

Engineering, Electrical Engineering, Materials Science +17