High power density side-gate HiGT modules with sintered Cu having superior high-temperature reliability to sintered Ag

Abstract

In this study, sintered Cu is shown to have superior reliability to that of sintered Ag, in a high-temperature thermal cycle test up to 200°C and superior power cycle durability at a maximum junction temperature of 175°C. A 1700 V low-stray-inductance dual module made with sintered Cu and a leading-edge side-gate HiGT (High-conductivity IGBT) is also shown to have high power density with low loss and ten times higher power cycle durability compared with Pb-rich solder.