A Planar-Gate High-Conductivity IGBT (HiGT) With Hole-Barrier Layer

Abstract

A high-conductivity insulated gate bipolar transistor (IGBT) (HiGT) with a double diffused MOS structure and an n-type hole-barrier layer surrounding a p-layer (planar HiGT) is presented. The hole-barrier layer prevents the holes from flowing into the p-layer and stores them in the n-layer. The planar HiGT provides a better tradeoff between collector-emitter saturation voltage [VcE(sat)] and turn-off loss than conventional IGBTs, regardless of the injection efficiency of the p-layer on the collector side, while it maintains a high blocking voltage by controlling the sheet carrier concentration of the hole-barrier layer. The planar HiGT has a tough short-circuit capability of more than 10 mus at 125degC, with a saturation current similar to that of conventional IGBTs.