Novel 3.3-kV advanced trench HiGT with low loss and low dv/dt noise

Abstract

Novel 3.3-kV trench IGBT with low loss and low dv <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">AK</sub> /dt noise was developed. The structural feature of the IGBTs is deep p-WELL layers separated from trench gates. This structure suppresses excess V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GE</sub> overshoot and then reduces recovery dv <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">AK</sub> /dt. Moreover, this effect is enhanced by reducing the resistance of the deep p-WELL layers (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">FP</sub> ). It was found that, for the first time, the trade-off characteristics between V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CEsat</sub> and recovery dv <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">AK</sub> /dt were drastically improved by separating p-WELL layers from trench gates and decreasing R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">FP</sub> . The recovery dv <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">AK</sub> /dt could be reduced by 79% more than that for the conventional trench IGBT, maintaining a small V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CEsat</sub> and E <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> equal to the conventional one.