Hidekatsu Onose

Edge Termination With Enhanced Field-Limiting Rings Insensitive to Surface Charge for High-Voltage SiC Power Devices

Takashi Hirao, Hidekatsu Onose, Kan Yasui et al. · IEEE Transactions on Electron Devices · 2020 · 25 citations

Edge Termination Structure, Engineering, Glow Discharge +16

Normally-off SiC-JFET inverter with low-voltage control and a high-speed drive circuit

K Ishikawa, Hidekatsu Onose, Yasuo Onose et al. · 2007 · 23 citations

Sic Modules, Electrical Engineering, Low-voltage Control +12

Influence of Lateral Spreading of Implanted Aluminum Ions and Implantation-Induced Defects on Forward Current–Voltage Characteristics of 4H-SiC Junction Barrier Schottky Diodes

Kazuhiro Mochizuki, Norifumi Kameshiro, Hidekatsu Onose et al. · IEEE Transactions on Electron Devices · 2009 · 21 citations

Materials Engineering, Semiconductor Technology, Electrical Engineering +12

3.3 kV/450 A Full-SiC nHPD2 (next High Power Density Dual) with Smooth Switching

Takashi Ishigaki, Seiichi Hayakawa, Tatsunori Murata et al. · 2017 · 20 citations

Full-sic Nhpd2, Electrical Engineering, Engineering +11

2 kV 4H-SiC Junction FETs

Hidekatsu Onose, Atsuo Watanabe, T. Someya et al. · Materials science forum · 2002 · 17 citations

Electrical Engineering, Engineering, Power Device +3