Norifumi Kameshiro

Growth of (101) GaN on a 7-degree off-oriented (0 0 1)Si substrate by selective MOVPE

Yoshio Honda, Norifumi Kameshiro, Masahito Yamaguchi et al. · Journal of Crystal Growth · 2002 · 91 citations

Engineering, Materials Engineering, Materials Science +13

Traction inverter that applies compact 3.3 kV / 1200 A SiC hybrid module

Katsumi Ishikawa, S. Yukutake, Yasuhiko Kono et al. · 2014 · 38 citations

Engineering, Electrical Engineering, Microelectronics +15

Influence of Lateral Spreading of Implanted Aluminum Ions and Implantation-Induced Defects on Forward Current–Voltage Characteristics of 4H-SiC Junction Barrier Schottky Diodes

Kazuhiro Mochizuki, Norifumi Kameshiro, Hidekatsu Onose et al. · IEEE Transactions on Electron Devices · 2009 · 22 citations

Engineering, Electrical Engineering, Materials Science +17

Analysis of high reverse currents of 4H-SiC Schottky-barrier diodes

Hiroyuki Okino, Norifumi Kameshiro, Kumiko Konishi et al. · Journal of Applied Physics · 2017 · 20 citations

Engineering, Electrical Engineering, Physics +17

Traction inverter that applies hybrid module using 3-kV SiC-SBDs

Katsumi Ishikawa, Kazutoshi Ogawa, Hidekatsu Onose et al. · 2010 · 15 citations

Engineering, Electrical Engineering, Microelectronics +14